US 12,308,614 B2
Vertical cavity surface emitting device
Masaru Kuramoto, Tokyo (JP)
Assigned to STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Appl. No. 17/285,859
Filed by STANLEY ELECTRIC CO., LTD., Tokyo (JP)
PCT Filed Oct. 7, 2019, PCT No. PCT/JP2019/039455
§ 371(c)(1), (2) Date Apr. 15, 2021,
PCT Pub. No. WO2020/080160, PCT Pub. Date Apr. 23, 2020.
Claims priority of application No. 2018-196393 (JP), filed on Oct. 18, 2018.
Prior Publication US 2021/0351568 A1, Nov. 11, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01S 5/183 (2006.01); H01S 5/065 (2006.01); H01S 5/10 (2021.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/18361 (2013.01) [H01S 5/0655 (2013.01); H01S 5/1071 (2013.01); H01S 5/18308 (2013.01); H01S 5/18341 (2013.01); H01S 5/3095 (2013.01); H01S 5/34333 (2013.01); H01S 2301/18 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting device comprising:
a substrate;
a first multilayer film reflecting mirror formed on the substrate;
a light-emitting structure layer that is formed on the first multilayer film reflecting mirror and includes a light-emitting layer; and
a second multilayer film reflecting mirror formed on the light-emitting structure layer, a resonator being constituted between the second multilayer film reflecting mirror and the first multilayer film reflecting mirror,
wherein:
the light-emitting structure layer includes a low resistance region and a high resistance region, the low resistance region is disposed in a ring shape between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror, and the high resistance region is formed inside the low resistance region and has an electrical resistance higher than an electrical resistance of the low resistance region,
the resonator includes a ring-shaped region, a central region, and an outer region, the ring-shaped region corresponds to the low resistance region of the light-emitting structure layer and extends between the first and the second multilayer film reflecting mirrors, the central region is disposed corresponding to the high resistance region inside the ring-shaped region, and the outer region is disposed outside the ring-shaped region,
the central region and the outer region have equivalent refractive indexes lower than an equivalent refractive index of the ring-shaped region, and
the high resistance region inside the low resistance region has a width twice or more of a diffusion length of carriers in the light-emitting layer.