US 12,308,612 B2
Visible light-emitting semiconductor laser device and method of manufacturing the same
Maxim Vladimirovich Ryabko, Moscow (RU); Alexey Andreevich Shchekin, Moscow (RU); and Aleksandr Sergeevich Shorokhov, Moscow (RU)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 25, 2022, as Appl. No. 17/824,526.
Claims priority of application No. RU2021115883 (RU), filed on Jun. 2, 2021; and application No. 10-2022-0021037 (KR), filed on Feb. 17, 2022.
Prior Publication US 2022/0393434 A1, Dec. 8, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/026 (2006.01); H01S 5/10 (2021.01); H01S 5/343 (2006.01)
CPC H01S 5/18302 (2013.01) [H01S 5/026 (2013.01); H01S 5/1042 (2013.01); H01S 5/18361 (2013.01); H01S 5/343 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor laser device comprising:
a semiconductor laser light-emitting structure having a vertical-cavity surface-emitting laser structure, the semiconductor laser light-emitting structure being configured to emit light having a first wavelength;
a wavelength converter comprising a metasurface, the wavelength converter being monolithically formed with the semiconductor laser light-emitting structure on a light output side of the semiconductor laser light-emitting structure; and
an air gap between the metasurface and the semiconductor laser light-emitting structure,
wherein the metasurface is configured to non-linearly convert the light having the first wavelength into light having a second wavelength.