US 12,308,370 B2
Cross field effect transistors (XFETs) in integrated circuits
Richard T. Schultz, Ft. Collins, CO (US)
Assigned to Advanced Micro Devices, Inc., Santa Clara, CA (US)
Filed by Advanced Micro Devices, Inc., Santa Clara, CA (US)
Filed on Sep. 29, 2021, as Appl. No. 17/489,221.
Prior Publication US 2023/0102901 A1, Mar. 30, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7827 (2013.01) [H01L 29/0665 (2013.01); H01L 29/1029 (2013.01); H01L 29/66666 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a first transistor comprising a first channel oriented in a first direction and a drain region with a length greater than a width of the first channel by at least a width of a drain contact;
an oxide layer adjacent to the first transistor; and
a second transistor adjacent to the oxide layer, wherein the second transistor comprises a second channel that is oriented in a direction orthogonal to the first direction; and
wherein responsive to a potential being applied to an input node of a cell of the integrated circuit, a current is conveyed from the input node to an output node of the cell through one of the first transistor and the second transistor.