US 12,308,344 B2
Multi-chip package having stress relief structure
Jen-Yuan Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 30, 2023, as Appl. No. 18/496,920.
Application 18/496,920 is a division of application No. 17/406,097, filed on Aug. 19, 2021, granted, now 12,087,729.
Claims priority of provisional application 63/182,724, filed on Apr. 30, 2021.
Prior Publication US 2024/0055396 A1, Feb. 15, 2024
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/20 (2006.01); H01L 23/24 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01)
CPC H01L 25/0652 (2013.01) [H01L 21/56 (2013.01); H01L 23/20 (2013.01); H01L 23/24 (2013.01); H01L 23/3135 (2013.01); H01L 23/315 (2013.01); H01L 25/50 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/33181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a package device comprising:
providing a first die group and a second die group;
determining a height difference between the first die group and the second die group;
providing a carrier substrate in response to the determined height difference, the carrier substrate being free of electronic devices, wherein the carrier substrate comprises:
at least one trench;
a dielectric material in the at least one trench; and
an air gap in the at least one trench and completely encapsulated in the dielectric material;
thinning the carrier substrate based on the height difference to obtain a thinned carrier substrate; and
mounting the thinned carrier substrate to the first die group to form a height-adjusted first die group having a height within a height range of the second die group.