US 12,308,323 B2
Package-on-package device
Ming-Fa Chen, Taichung (TW); Sung-Feng Yeh, Taipei (TW); and Hsien-Wei Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 12, 2024, as Appl. No. 18/602,718.
Application 17/813,896 is a division of application No. 16/823,655, filed on Mar. 19, 2020, granted, now 11,476,201, issued on Oct. 18, 2022.
Application 18/602,718 is a continuation of application No. 17/813,896, filed on Jul. 20, 2022, granted, now 11,955,433.
Claims priority of provisional application 62/906,943, filed on Sep. 27, 2019.
Prior Publication US 2024/0266297 A1, Aug. 8, 2024
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
connecting a first side of a redistribution structure to a die package, wherein the die package comprises:
a first die directly bonded to a second die;
a dielectric material over the second die and surrounding the first die;
a first through via extending through the dielectric material, wherein the first through via is connected to the first die; and
a second through via extending through the dielectric material, wherein the second through via is connected to the second die;
connecting a semiconductor device to the first side of the redistribution structure;
forming a third through via on the first side of the redistribution structure; and
forming a molding material on the redistribution structure, wherein the molding material laterally separates the die package from the semiconductor device, wherein the molding material laterally surrounds the third through via.