US 12,308,322 B2
Dual-sided routing in 3D semiconductor system-in-package structure and methods of forming the same
Po-Hao Tsai, Zhongli (TW); Po-Yao Chuang, Hsinchu (TW); Meng-Liang Lin, Hsinchu (TW); Yi-Wen Wu, Xizhi (TW); Shin-Puu Jeng, Hsinchu (TW); and Techi Wong, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,769.
Application 17/690,206 is a division of application No. 16/811,465, filed on Mar. 6, 2020, granted, now 11,322,447, issued on May 3, 2022.
Application 18/447,769 is a continuation of application No. 17/690,206, filed on Mar. 9, 2022, granted, now 11,824,007.
Claims priority of provisional application 62/888,277, filed on Aug. 16, 2019.
Prior Publication US 2023/0387028 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/5384 (2013.01) [H01L 21/4885 (2013.01); H01L 21/56 (2013.01); H01L 21/76802 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first component, forming the first component comprising:
forming a first redistribution structure over a first substrate;
forming a first conductive via over the first redistribution structure; and
attaching a first die to the first redistribution structure, the first die being laterally displaced from the first conductive via;
forming a second component, forming the second component comprising:
forming a second redistribution structure, forming the second redistribution structure comprising:
forming a first metal trace over a second substrate;
forming a dielectric layer over the first metal trace;
forming a second conductive via in the dielectric layer; and
forming a second metal trace over the second conductive via and in the dielectric layer;
forming a first conductive connector over the second metal trace; and
attaching a second die to the second metal trace;
after attaching the first die to the first redistribution structure and attaching the second die to the second metal trace, bonding the first conductive connector to the first conductive via; and
forming an encapsulant between the first substrate and the second metal trace, the encapsulant being continuous and physically contacting the first die, the second die, and a sidewall of the second redistribution structure.