US 12,308,315 B2
Fuse component and semiconductor device
Kai-Po Shang, Taoyuan (TW); and Jui-Hsiu Jao, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Dec. 6, 2021, as Appl. No. 17/543,256.
Prior Publication US 2023/0178482 A1, Jun. 8, 2023
Int. Cl. H01L 23/525 (2006.01); H10B 20/20 (2023.01); H10B 20/25 (2023.01); H10D 64/27 (2025.01)
CPC H01L 23/5252 (2013.01) [H01L 23/5256 (2013.01); H10B 20/20 (2023.02); H10B 20/25 (2023.02); H10D 64/513 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A fuse component, comprising:
an active region having a surface;
a first fuse dielectric layer extending from the surface of the active region into the active region; and
a first gate metal layer surrounded by the first fuse dielectric layer;
a second fuse dielectric layer extending from the surface of the active region into the active region; and
a second gate metal layer surrounded by the second fuse dielectric layer; and
a first conductive layer coupled with the first gate metal layer and the second gate metal layer, wherein the first gate metal layer is electrically connected with the second gate metal layer;
wherein the first gate metal layer and the second gate metal layer each have a width and a length greater than the width, the length of each of first gate metal layer and the second gate metal layer extending along a first direction, while the first conductive layer extends from the first gate metal layer to the second gate metal layer along a second direction not parallel to the first direction,
wherein the first gate metal layer and the second gate metal layer extend onto the active region along a third direction perpendicular to the first direction and the second direction, respectively, and
wherein the active region, the first fuse dielectric layer, and the first gate metal layer form a first antifuse and the active region, the second fuse dielectric layer, and the second gate metal layer form a second antifuse.