US 12,308,314 B2
Metal loss prevention in conductive structures
Yen-Yu Chen, Taichung (TW); and Chung-Liang Cheng, Changhua County (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 17, 2023, as Appl. No. 18/135,563.
Application 17/675,302 is a division of application No. 16/901,688, filed on Jun. 15, 2020, granted, now 11,257,755, issued on Feb. 22, 2022.
Application 18/135,563 is a continuation of application No. 17/675,302, filed on Feb. 18, 2022, granted, now 11,631,640.
Prior Publication US 2023/0253314 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01)
CPC H01L 23/5228 (2013.01) [H01L 21/02592 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76888 (2013.01); H01L 23/53266 (2013.01); H01L 23/535 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a substrate;
a contact layer comprising a first conductive structure disposed on the substrate; and
a metallization layer comprising a second conductive structure disposed on the contact layer, wherein the second conductive structure comprises:
a metal layer disposed on the first conductive structure;
a metal nitride layer disposed on the metal layer;
a semiconductor layer disposed on the metal nitride layer; and
a metal fill layer disposed on the semiconductor layer.