US 12,308,301 B2
Structure and bonded body
Yumi Fukuda, Setagaya (JP); Koichi Harada, Bunkyo (JP); Kenji Essaki, Kawasaki (JP); Yasushi Hattori, Kawasaki (JP); Yasuhiro Goto, Minato (JP); Keiko Albessard, Yokohama (JP); and Maki Yonetsu, Mitaka (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Feb. 16, 2021, as Appl. No. 17/176,399.
Application 17/176,399 is a continuation of application No. PCT/JP2020/009944, filed on Mar. 9, 2020.
Claims priority of application No. 2019-168557 (JP), filed on Sep. 17, 2019.
Prior Publication US 2021/0166989 A1, Jun. 3, 2021
Int. Cl. H01L 23/373 (2006.01); C04B 35/597 (2006.01)
CPC H01L 23/3735 (2013.01) [C04B 35/597 (2013.01); C04B 2235/3873 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a crystal grain including a β type silicon nitride crystal phase; and
a grain boundary provided around the crystal grain, the grain boundary having a composition comprising yttrium, silicon, oxygen and nitrogen and the grain boundary consisting essentially of a Y2Si3O3N4 crystal phase, wherein
in an X-ray diffraction pattern in accordance with a θ-2θ method, a ratio of a second peak intensity being highest and appearing in 2θ=31.93±0.1° with respect to a first peak intensity being highest and appearing in 2θ=27.03±0.1° is 0.005 or more and 0.20 or less, wherein for measurement of the X-ray diffraction pattern, a tube voltage is set to 45 kV and a surface roughness Ra is 0.05 μm or less, and
the crystal grain is oval shaped.