US 12,308,244 B2
Dry etching method, method for producing semiconductor device, and etching device
Kunihiro Yamauchi, Ube (JP); Hikaru Kitayama, Ube (JP); and Akifumi Yao, Ube (JP)
Assigned to Central Glass Company, Limited, Ube (JP)
Appl. No. 17/771,193
Filed by Central Glass Company, Limited, Ube (JP)
PCT Filed Sep. 1, 2020, PCT No. PCT/JP2020/033073
§ 371(c)(1), (2) Date Apr. 22, 2022,
PCT Pub. No. WO2021/079624, PCT Pub. Date Apr. 29, 2021.
Claims priority of application No. 2019-192524 (JP), filed on Oct. 23, 2019.
Prior Publication US 2022/0415667 A1, Dec. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/31122 (2013.01) [H01L 21/32135 (2013.01); H01L 21/67069 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A dry etching method comprising
reacting an etching target film formed on a surface of a workpiece with a β-diketone and nitrogen dioxide to etch the etching target film in a non-plasma state,
the etching target film containing a metal having an M-O bond energy of 5 eV or higher or an oxide of the metal.