US 12,308,224 B2
Silicon carbide wafers and grinding method thereof
Chin Chen Chiu, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on May 4, 2022, as Appl. No. 17/736,110.
Claims priority of application No. 110120789 (TW), filed on Jun. 8, 2021.
Prior Publication US 2022/0392761 A1, Dec. 8, 2022
Int. Cl. H01L 21/02 (2006.01); C30B 29/36 (2006.01); H01L 29/16 (2006.01)
CPC H01L 21/02013 (2013.01) [C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 29/1608 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A grinding method of silicon carbide wafers, comprising:
slicing an ingot obtained from a crystal growth process to obtain a silicon carbide wafer, wherein the silicon carbide wafer has a first surface and a second surface opposite to the first surface;
pre-forming a supporting structure having a concave surface or a convex surface, and placing the supporting structure on a grinding stage;
after forming the supporting structure, placing the silicon carbide wafer on a grinding stage over the supporting structure for performing a grinding process, wherein the supporting structure is interposed between the grinding stage and the silicon carbide wafer, and the grinding process comprises:
placing the silicon carbide wafer on the concave surface or the convex surface of the supporting structure, so that a non-grinding surface in a first grinding step of the silicon carbide wafer contacts the concave surface or the convex surface, wherein the non-grinding surface is the first surface, and performing the first grinding step to remove portions of the second surface of the silicon carbide wafer; and
removing the supporting structure, flipping the silicon carbide wafer and placing the silicon carbide wafer on the grinding stage, and performing a second grinding step to remove portions of the first surface of the silicon carbide wafer.