| CPC H01J 37/32724 (2013.01) [H01J 37/32715 (2013.01); H01J 37/32651 (2013.01)] | 15 Claims |

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1. A substrate processing chamber comprising:
a chamber body having a top wall, a bottom wall and a sidewall containing an interior volume and a process region;
a pump port positioned on a first side of the sidewall of the chamber body adjacent to the process region and configured to evacuate gases from the process region and a slit valve positioned on a second side of the sidewall of the chamber body and opposite the first side;
a substrate support within the interior volume, the substrate support comprising a support shaft with a support body on an end of the support shaft, the support body having a support surface and a back surface defining a thickness of the support body, a heater is within the thickness of the support body; and
a thermal shield comprising a disc-shaped body having a thickness, a central axis and a diameter with a first edge on a first side of the disc-shaped body positioned adjacent to the pump port and a second edge on a second side of the disc-shaped body positioned adjacent to the slit valve, the first edge and the second edge at opposite ends of a diameter of the disc-shaped body, a front surface and a back surface that define the thickness of the disc-shaped body, the thermal shield positioned along the support shaft at a distance from the support body so that there is a gap between the back surface of the support body and the front surface of the thermal shield, the front surface of the disc-shaped body comprising a first longitudinal region comprising the first edge and extending a distance from the first edge toward the central axis and a second longitudinal region comprising the second edge and extending a distance from the second edge toward the central axis along the diameter, the first longitudinal region having a first emissivity in a range of from 0 to 0.35 and the second longitudinal region having a second emissivity in a range of from 0.36 to 1 and the first longitudinal region and the second longitudinal region are configured to reduce side to side temperature variation of the support surface.
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