US 12,308,211 B2
Systems and methods for use of low frequency harmonics in bias radiofrequency supply to control uniformity of plasma process results across substrate
Alexei Marakhtanov, Albany, CA (US); Felix Leib Kozakevich, Sunnyvale, CA (US); Ranadeep Bhowmick, San Jose, CA (US); and John Holland, San Jose, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 18/010,900
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Jun. 23, 2021, PCT No. PCT/US2021/038647
§ 371(c)(1), (2) Date Dec. 16, 2022,
PCT Pub. No. WO2021/262827, PCT Pub. Date Dec. 30, 2021.
Claims priority of provisional application 63/044,827, filed on Jun. 26, 2020.
Prior Publication US 2023/0317414 A1, Oct. 5, 2023
Int. Cl. H01J 37/00 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32183 (2013.01) [H01J 37/32165 (2013.01); H01J 2237/334 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A radiofrequency (RF) signal supply system for a plasma processing system, comprising:
a first RF signal generator set to generate a first RF signal having a first frequency;
a second RF signal generator set to generate a second RF signal having a second frequency, the second frequency being a specified harmonic of the first frequency;
a third RF signal generator set to generate a third RF signal having a third frequency, the third frequency being a specified harmonic of the first frequency, the third frequency and the second frequency being different specified harmonics of the first frequency; and
a fourth RF signal generator set to generate a fourth RF signal having a fourth frequency, the fourth frequency being at least two orders of magnitude larger than the first frequency.