US 12,308,086 B2
System and method for testing memory device
Jui-Chung Hsu, Pingtung County (TW); and Wan-Chun Fang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 7, 2023, as Appl. No. 18/206,772.
Prior Publication US 2024/0412800 A1, Dec. 12, 2024
Int. Cl. G11C 29/38 (2006.01); G11C 29/12 (2006.01)
CPC G11C 29/38 (2013.01) [G11C 29/12005 (2013.01)] 16 Claims
OG exemplary drawing
 
12. A method, comprising:
generating a write data signal to a first pin of a memory device;
generating a glitch signal and a control signal to a second pin of the memory device;
latching data from the write data signal for a write operation in response to at least one of the glitch signal and the control signal;
performing a read operation to generate a read data signal; and
determining, based on write data signal, whether bits of the read data signal are moved toward a first side to generate a test result indicating a disturbance to the write operation induced by the glitch signal,
wherein when the bits of the read data signal are moved toward a first side, compared with the write data signal, at least one mismatched bit between the read data signal and the write data signal has a logic high value.