| CPC G11C 29/12005 (2013.01) | 20 Claims |
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16. A method of predicting life expectancy of a volatile memory device, comprising:
storing dummy data in selected memory cells within the volatile memory device, which are connected to a selected wordline;
performing test refresh operations on the selected memory cells;
performing test sensing operations of the selected memory cells;
generating multi-bit-count current based on a voltage of control lines of sense amplifiers that are electrically connected to the selected memory cells through bitlines, during the test sensing operations;
outputting result values by comparing the multi-bit-count current with each of a plurality of reference currents; and
counting the number of deteriorated memory cells, among the selected memory cells, based on the result values.
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