US 12,308,078 B2
One-time programmable (OTP) memory and method of operating the same
Kuo-Pin Chang, Hsinchu (TW); and Kuo-Ching Huang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on May 5, 2022, as Appl. No. 17/737,259.
Prior Publication US 2023/0360711 A1, Nov. 9, 2023
Int. Cl. G11C 17/00 (2006.01); G11C 13/00 (2006.01); G11C 17/16 (2006.01)
CPC G11C 17/16 (2013.01) [G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A one-time programmable (OTP) memory, comprising:
a plurality of bit lines;
a plurality of word lines; and
a plurality of memory cells, each memory cell of the plurality of memory cells comprising:
a first terminal coupled to a bit line of the plurality of bit lines;
a second terminal coupled to a word line of the plurality of word lines; and
a selector connected directly to the first terminal and directly to the second terminal and having a threshold voltage that is alterable by an electric current, wherein the OTP memory comprises an information block of a memory device and is configured to store information dedicated to the memory device, and each of the OTP memory and the memory device comprises a three-dimensional cross-point structure including a plurality of first level memory cells and a plurality of second level memory cells vertically stacked on the plurality of first level memory cells, respectively.