US 12,308,076 B2
Memory device and erasing method thereof
Ying-Shan Kuo, Hsinchu County (TW); Lung-Chi Cheng, Hsinchu County (TW); and Ju-Chieh Cheng, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on May 4, 2023, as Appl. No. 18/312,037.
Claims priority of application No. 112106690 (TW), filed on Feb. 23, 2023.
Prior Publication US 2024/0290400 A1, Aug. 29, 2024
Int. Cl. G11C 16/16 (2006.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/3445 (2013.01) [G11C 16/14 (2013.01); G11C 16/16 (2013.01); G11C 16/3477 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An erasing method of a memory device, comprising:
determining whether a memory passes a first erasing verification operation according to a first erasing verification threshold;
when the memory does not pass the first erasing verification operation, generating at least one erasing pulse, corresponding to an erasing size, according to an erasing number so as to perform an erasing operation on the memory;
when the memory passes the first erasing verification operation, generating a flag, wherein the flag indicates that all addresses of the memory have passed a first erasing verification, and determining whether the memory passes a second erasing verification operation according to a second erasing verification threshold;
when the memory does not pass the second erasing verification operation, generating the at least one erasing pulse, corresponding to the erasing size, according to the erasing number so as to perform the erasing operation on the memory;
when the memory passes the second erasing verification operation, performing an over-erase correction on the memory;
determining whether there is the flag indicating that all addresses of the memory have passed the first erasing verification;
when there is no flag indicating that all addresses of the memory have passed the first erasing verification, performing the step of determining whether the memory passes the first erasing verification operation according to the first erasing verification threshold; and
when there is the flag indicating that all addresses of the memory have passed the first erasing verification, performing the step of determining whether the memory passes the second erasing verification operation according to the second erasing verification threshold.