US 12,308,071 B2
Semiconductor device and method for manufacturing the same
Kuo-Chiang Wang, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Feb. 20, 2023, as Appl. No. 18/111,676.
Prior Publication US 2024/0282361 A1, Aug. 22, 2024
Int. Cl. G11C 11/4093 (2006.01); H10B 12/00 (2023.01); H10B 80/00 (2023.01)
CPC G11C 11/4093 (2013.01) [H10B 12/09 (2023.02); H10B 12/50 (2023.02); H10B 80/00 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising: a memory cell array; a memory interface; a first peripheral circuit, supporting a first memory protocol; a second peripheral circuit, supporting a second memory protocol different from the first memory protocol; and a voltage detector configured to detect whether the semiconductor device is using the first memory protocol or the second memory protocol; wherein the first peripheral circuit and the second peripheral circuit share the memory cell array and the memory interface; wherein I/O (input/output) pin definitions of the memory interface changes in response to the first memory protocol or the second memory protocol used by the semiconductor device; wherein the first peripheral circuit or the second peripheral circuit is activated in response to an output signal from the voltage detector.