US 12,308,066 B2
Pseudo-static random access memory
Hitoshi Ikeda, Yokohama (JP)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Mar. 6, 2023, as Appl. No. 18/179,205.
Claims priority of application No. 2022-126808 (JP), filed on Aug. 9, 2022.
Prior Publication US 2024/0055037 A1, Feb. 15, 2024
Int. Cl. G11C 7/00 (2006.01); G11C 11/406 (2006.01); G11C 11/4076 (2006.01)
CPC G11C 11/40611 (2013.01) [G11C 11/40622 (2013.01); G11C 11/4076 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A pseudo-static random access memory comprising:
a control unit, wherein when a memory refresh request is generated during a first transaction, controlling refresh operations of the memory to be performed as many times as the number of refresh requests which is generated in the first transaction, wherein the refresh operations are performed during a period after the first transaction ends and before a second transaction which is after the first transaction.