US 12,308,063 B2
Ferroelectric thin film, electronic element using name, and method for manufacturing ferroelectric thin film
Masato Uehara, Tosu (JP); Morito Akiyama, Tosu (JP); Hiroshi Yamada, Tosu (JP); Hiroshi Funakubo, Tokyo (JP); Takao Shimizu, Tokyo (JP); and Shinnosuke Yasuoka, Tokyo (JP)
Assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo (JP)
Appl. No. 17/757,932
Filed by NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo (JP)
PCT Filed Dec. 25, 2020, PCT No. PCT/JP2020/048846
§ 371(c)(1), (2) Date Jun. 23, 2022,
PCT Pub. No. WO2021/132602, PCT Pub. Date Jul. 1, 2021.
Claims priority of application No. 2019-239114 (JP), filed on Dec. 27, 2019; application No. 2020-031428 (JP), filed on Feb. 27, 2020; and application No. 2020-140024 (JP), filed on Aug. 21, 2020.
Prior Publication US 2023/0029023 A1, Jan. 26, 2023
Int. Cl. H01L 21/02 (2006.01); G11C 11/22 (2006.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01)
CPC G11C 11/223 (2013.01) [H01L 21/0228 (2013.01); H10D 64/033 (2025.01); H10D 64/689 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A ferroelectric thin film represented by a chemical formula M11-xM2xN, the ferroelectric thin film having ferroelectric properties and exhibiting reversible positive and negative polarization reversal,
wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less,
a crystal structure thereof is a wuzrite structure, and
a thickness thereof is within a range of 1 nm to 200 nm.