US 12,308,052 B2
Produce thinner DTS and adjustable capacitance for TDMR heads
Fang Chen, Livermore, CA (US); Chih-Ching Hu, Pleasanton, CA (US); Yung-Hung Wang, San Jose, CA (US); Chen-Jung Chien, Mountain View, CA (US); Ming Mao, Dublin, CA (US); and Ming Jiang, San Jose, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jul. 31, 2023, as Appl. No. 18/228,517.
Claims priority of provisional application 63/459,227, filed on Apr. 13, 2023.
Prior Publication US 2024/0347073 A1, Oct. 17, 2024
Int. Cl. G11B 5/39 (2006.01); G11B 5/235 (2006.01); G11B 5/31 (2006.01)
CPC G11B 5/3912 (2013.01) [G11B 5/235 (2013.01); G11B 5/3954 (2013.01); G11B 5/3116 (2013.01); G11B 5/398 (2013.01); G11B 2005/3996 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A read head, comprising:
a first lower shield;
a first sensor disposed over the first lower shield;
a first upper shield disposed over the first sensor;
a read separation gap disposed on the first upper shield, the read separation gap comprising a first sublayer comprising AlOx, where x is an integer greater than or equal to 1, disposed in contact with the first upper shield and a second sublayer comprising SiO2 disposed in contact with the first sublayer, wherein the read separation gap has a thickness of about 3 nm to about 25 nm;
a second lower shield disposed in contact with the second sublayer of the read separation gap and spaced from the first sublayer of the read separation gap;
a second sensor disposed over the second lower shield; and
a second upper shield disposed over the second sensor.