US 12,307,804 B2
Fingerprint collection device and display panel
Fan Gong, Wuhan (CN); Fei Ai, Wuhan (CN); Jiyue Song, Wuhan (CN); and Dewei Song, Wuhan (CN)
Assigned to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Wuhan (CN)
Appl. No. 17/769,396
Filed by WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Wuhan (CN)
PCT Filed Mar. 10, 2022, PCT No. PCT/CN2022/080189
§ 371(c)(1), (2) Date Apr. 15, 2022,
PCT Pub. No. WO2023/164961, PCT Pub. Date Sep. 7, 2023.
Claims priority of application No. 202210200185.5 (CN), filed on Mar. 2, 2022.
Prior Publication US 2024/0135742 A1, Apr. 25, 2024
Prior Publication US 2024/0233433 A9, Jul. 11, 2024
Int. Cl. G06V 40/13 (2022.01); H01L 27/12 (2006.01); H01L 31/0216 (2014.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10F 77/30 (2025.01)
CPC G06V 40/1318 (2022.01) [H10D 86/441 (2025.01); H10D 86/60 (2025.01); H10F 77/334 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A fingerprint collection device, comprising:
a base substrate;
a driving circuit layer disposed on one side of the base substrate, wherein the driving circuit layer comprises a control transistor and a plurality of signal traces, the control transistor comprises a gate electrode, a gate insulating layer, an active layer, and a source/drain metal layer which are stacked sequentially, the plurality of the signal traces comprise a first signal trace disposed in a same layer as the gate electrode and a second signal trace disposed in a same layer as the source/drain metal layer;
a first passivation layer covering one side, away from the base substrate, of the driving circuit layer;
a photodiode disposed on one side, away from the base substrate, of the first passivation layer, wherein the photodiode is electrically connected to the control transistor through a first via penetrating the first passivation layer, the source/drain metal layer comprises a source electrode and a drain electrode, the drain electrode is electrically connected to the photodiode, and the source electrode is electrically connected to the second signal trace;
a second passivation layer covering one side, away from the base substrate, of the photodiode; and
an electrode layer disposed on one side, away from the base substrate, of the second passivation layer, wherein the electrode layer comprises a first electrode portion and a second electrode portion, the first electrode portion is electrically connected to the photodiode through a second via penetrating the second passivation layer, the second electrode portion is electrically connected to the first signal trace and the second signal trace through a third via and a fourth via to form a bridge structure, the third via penetrates the second passivation layer, the first passivation layer, and the gate insulating layer, and the fourth via penetrates the second passivation layer and the first passivation layer.