US 12,307,130 B2
Data writing method for avoiding repeated writing, memory storage device, and memory control circuit unit
Wei-Cheng Li, Miaoli County (TW); Yu-Chung Shen, Miaoli County (TW); Jia-Li Xu, New Taipei (TW); and Ping-Cheng Chen, Taoyuan (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Oct. 17, 2022, as Appl. No. 17/967,884.
Claims priority of application No. 111134061 (TW), filed on Sep. 8, 2022.
Prior Publication US 2024/0086109 A1, Mar. 14, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0652 (2013.01); G06F 3/0679 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A data writing method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, the physical erasing units comprise a first physical erasing unit, and the data writing method comprises:
receiving a write command from a host system, wherein the write command comprises first data;
before storing the first data, checking a status of a first physical programming unit in the first physical erasing unit, wherein the first physical programming unit is determined according to the first data; and
in response to the status of the first physical programming unit being a first status, sending a first command sequence, wherein the first command sequence is configured to instruct the rewritable non-volatile memory module to store at least part of the first data to the first physical programming unit,
wherein the step of checking the status of the first physical programming unit in the first physical erasing unit comprises:
checking whether a total number of memory cell not in an erasure status in the first physical programming unit exceeds a threshold value; and
in response to the total number of memory cell not in the erasure status in the first physical programming unit exceeding the threshold value, judging that the status of the first physical programming unit is not the first status.