US 12,307,101 B1
Memory management method, memory storage apparatus and memory control circuit unit
Yu-Heng Liu, Hsinchu County (TW); Yu-Siang Yang, New Taipei (TW); Yao-Hsuan Li, Hsinchu County (TW); An-Cheng Liu, Taipei (TW); and Wei Lin, Taipei (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Mar. 15, 2024, as Appl. No. 18/605,832.
Claims priority of application No. 113106267 (TW), filed on Feb. 22, 2024.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory management method, which is adaptable for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the memory management method comprising:
sending a plurality of read command sequences comprising a first read command sequence and a second read command sequence, wherein the first read command sequence is configured to instruct a performing of a first read operation on a first physical unit of the plurality of physical units, and the second read command sequence is configured to instruct a performing of a second read operation on the first physical unit;
determining a system parameter according to a time interval between a first read time point corresponding to the first read operation and a second read time point corresponding to the second read operation; and
instructing the rewritable non-volatile memory module to perform a specific operation according to the system parameter.