CPC G03F 7/7085 (2013.01) [G01N 33/005 (2013.01); G03F 7/70308 (2013.01)] | 19 Claims |
1. Projection exposure apparatus for semiconductor lithography, comprising a device for determining concentration of atomic hydrogen in a plasma in a region of an optical element, wherein the device comprises:
a sensor, and
a filter element arranged between the region of the plasma and the sensor, wherein the filter element is configured to predominantly allow passage of atomic hydrogen from the plasma to the sensor, and
wherein the filter element comprises a channel-shaped region for the passage of the atomic hydrogen.
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