US 12,306,540 B2
Two-dimensional (2D) patterns using multiple exposures of one-dimensional (1D) photolithography masks or holographic interference lithography
Lu Tian, Palo Alto, CA (US); Wei Jin, Saratoga, CA (US); Joseph Daniel Lowney, Tucson, AZ (US); and Thomas Mercier, Weston, FL (US)
Assigned to GOOGLE LLC, Mountain View, CA (US)
Filed by GOOGLE LLC, Mountain View, CA (US)
Filed on Dec. 13, 2022, as Appl. No. 18/080,431.
Prior Publication US 2024/0192606 A1, Jun. 13, 2024
Int. Cl. G03F 7/00 (2006.01); G03F 1/70 (2012.01); G03F 7/20 (2006.01)
CPC G03F 7/70216 (2013.01) [G03F 1/70 (2013.01); G03F 7/2022 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
exposing a photoresist layer via a first exposure to a first interference pattern to form a first unidimensional series of features, wherein the first unidimensional series of features provides alternating first minima and maxima of illumination intensity along a first dimension; and
exposing the photoresist layer via a second exposure to a second interference pattern to form a second unidimensional series of features, the second interference pattern being rotated relative to the first interference pattern such that the second unidimensional series of features provides alternating second minima and maxima of illumination intensity along a second dimension that is angularly separated from the first dimension.