CPC G03F 7/32 (2013.01) [G03F 7/0043 (2013.01); G03F 7/0046 (2013.01); G03F 7/038 (2013.01); G03F 7/0382 (2013.01); G03F 7/039 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/0758 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/304 (2013.01)] | 5 Claims |
1. A rinsing liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to washing, and
containing an organic solvent,
wherein the rinsing liquid contains a first organic solvent having a solubility parameter value of 16.3 MPa1/2 or less and a second organic solvent having a solubility parameter value of 17.1 MPa1/2 or more,
the first organic solvent is undecane,
the second organic solvent contains at least one solvent selected from the group consisting of butyl acetate and 2-heptanone as a major component, and at least one solvent selected from the group consisting of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether as a minor component,
a content of the undecane is 40% by mass or less with respect to a total mass of the rinsing liquid, and
the rinsing liquid does not include a polymer.
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