US 12,306,534 B2
Semiconductor photoresist composition and method of forming patterns using the composition
Seung Han, Suwon-si (KR); Jaehyun Kim, Suwon-si (KR); Kyungsoo Moon, Suwon-si (KR); Changsoo Woo, Suwon-si (KR); Seungyong Chae, Suwon-si (KR); Ran Namgung, Suwon-si (KR); and Hwansung Cheon, Suwon-si (KR)
Assigned to Samsung SDI Co., Ltd., Yongin-si (KR)
Filed by Samsung SDI Co., Ltd., Yongin-si (KR)
Filed on May 3, 2021, as Appl. No. 17/306,820.
Claims priority of application No. 10-2020-0056720 (KR), filed on May 12, 2020.
Prior Publication US 2021/0356861 A1, Nov. 18, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); C07F 7/22 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/0042 (2013.01) [C07F 7/2208 (2013.01); C07F 7/2224 (2013.01); G03F 7/0043 (2013.01); G03F 7/0045 (2013.01); H01L 21/0274 (2013.01)] 14 Claims
 
1. A semiconductor photoresist composition, comprising:
an organometallic compound;
an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25° C., and a pKa of about 3 to about 5; and
a solvent,
wherein the organometallic compound is represented by Chemical Formula 1: Chemical Formula 1

OG Complex Work Unit Chemistry
and
wherein, in Chemical Formula 1,
R is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 aliphatic unsaturated organic group including at least one double bond or triple bond, a substituted or unsubstituted C6 to C30 aryl group, an ethoxy group, a propoxy group, or a combination thereof,
X, Y, and Z are each independently —OR1 or —OC(═O)R2,
R1 is a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and
R2 is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof.