US 12,306,533 B2
Optical device manufacturing method and manufacturing apparatus using local etching
Yoshinori Hibino, Yokohama (JP); Mikihiro Kurosawa, Yokohama (JP); Manabu Oguma, Yokohama (JP); Masahiro Yanagisawa, Yokohama (JP); and Tomoyuki Yamada, Yokohama (JP)
Assigned to NTT Electronics Corporation, Kanagawa (JP)
Appl. No. 17/796,958
Filed by NTT Electronics Corporation, Kanagawa (JP)
PCT Filed Feb. 2, 2021, PCT No. PCT/JP2021/003786
§ 371(c)(1), (2) Date Aug. 2, 2022,
PCT Pub. No. WO2021/157578, PCT Pub. Date Aug. 12, 2021.
Claims priority of application No. 2020-019168 (JP), filed on Feb. 6, 2020.
Prior Publication US 2023/0341768 A1, Oct. 26, 2023
Int. Cl. G03F 7/00 (2006.01); G02B 6/42 (2006.01); G03F 7/20 (2006.01)
CPC G03F 7/0005 (2013.01) [G02B 6/4214 (2013.01); G03F 7/2043 (2013.01)] 6 Claims
OG exemplary drawing
 
1. An optical device manufacturing method using local etching, which includes a wafer process of manufacturing a waveguide type optical device composed of a light-propagating core and a cladding, the method comprising:
forming a photoresist on a manufactured wafer;
supplying a reactive etching gas to induce a local etching beam at the tip of a nozzle, the local etching beam having plasma with a Gaussian intensity distribution being rotationally symmetric about the central axis of the nozzle opening, the plasma including the reactive etching gas; and
forming a slanted end surface at an arbitrary angle in an arbitrary position on the wafer by use of the nozzle by controlling a moving speed and relative positions between the wafer and the nozzle.