| CPC G01N 15/06 (2013.01) [G01N 2015/0687 (2013.01)] | 1 Claim |
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1. A method of determining a concentration of precipitated silicon
the method comprising:
adding a silicon compound to a phosphoric acid solution;
etching a silicon nitride film deposited on a wafer with the phosphoric acid solution including the silicon compound, wherein the phosphoric acid solution including the silicon compound is at a temperature in a range of 100° C. to 180° C., wherein the silicon nitride film has a thickness of 1000 to 5000 A, and etching of the silicon nitride film generates silicon that is contained within the phosphoric acid solution;
cooling the phosphoric acid solution containing the generated silicon to a temperature range of 1° C. to 35° C. and diluting the phosphoric acid solution with a solvent which is ethanol, such that the phosphoric acid solution and ethanol are mixed so as to be in a ratio of 1:0.5 to 1, to thereby precipitate the generated silicon in the phosphoric acid solution;
dissolving the precipitated silicon by mixing 100 parts by weight of a fluorine compound solution with 50 to 100 parts by weight of the precipitated silicon; and
determining the concentration of the precipitated silicon through inductively coupled plasma optical emission spectroscopy (ICP-OES).
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