US 12,305,310 B2
Indium electroplating on physical vapor deposition tantalum
Michael J. Rondon, Santa Rosa, CA (US); Jon Sigurdson, Santa Barbara, CA (US); and Eric R. Miller, Orcutt, CA (US)
Assigned to RAYTHEON COMPANY, Waltham, MA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on Aug. 2, 2023, as Appl. No. 18/363,998.
Application 18/363,998 is a division of application No. 17/098,560, filed on Nov. 16, 2020, granted, now 11,753,736.
Prior Publication US 2024/0018684 A1, Jan. 18, 2024
Int. Cl. C25D 7/12 (2006.01); C23C 14/18 (2006.01); C25D 3/54 (2006.01); H01L 23/00 (2006.01)
CPC C25D 7/12 (2013.01) [C23C 14/18 (2013.01); C25D 3/54 (2013.01); C25D 7/123 (2013.01); H01L 24/10 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A wafer stack comprising:
a substrate;
a tantalum-nitride film formed on the substrate, said tantalum-nitride film having been deposited using physical vapor deposition in a deposition chamber of a physical vapor deposition apparatus controlled by a deposition controller;
a tantalum layer formed by physical vapor deposition on the tantalum-nitride film, wherein the tantalum layer is at least three times thicker than the tantalum-nitride film, and an average sheet resistance of the tantalum layer and the tantalum-nitride film combined on the substrate is between 0.1 and 1.0 ohms-per-square; and
indium deposited directly on the tantalum layer using electroplating in an electroplating bath of an electroplating apparatus controlled by an electroplating controller.