US 12,305,273 B2
Nanotwinned nickel films with high strength and ductility
Jagannathan Rajagopalan, Tempe, AZ (US); and Rohit Berlia, Tempe, AZ (US)
Assigned to ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, AZ (US)
Filed by Jagannathan Rajagopalan, Tempe, AZ (US); and Rohit Berlia, Tempe, AZ (US)
Filed on Jul. 11, 2023, as Appl. No. 18/350,138.
Claims priority of provisional application 63/389,649, filed on Jul. 15, 2022.
Prior Publication US 2024/0018643 A1, Jan. 18, 2024
Int. Cl. C23C 14/18 (2006.01); C23C 14/02 (2006.01); C23C 14/35 (2006.01); C23C 14/54 (2006.01)
CPC C23C 14/18 (2013.01) [C23C 14/021 (2013.01); C23C 14/025 (2013.01); C23C 14/35 (2013.01); C23C 14/542 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of forming a nanotwinned metal film, comprising:
providing a single crystal silicon wafer;
etching the single crystal silicon wafer;
depositing a silver film onto the single crystal silicon wafer forming a silver buffer layer; and
depositing a metallic film onto the silver buffer layer using sputter deposition, wherein the metallic film comprises nickel, and wherein a first 100 nanometers of the metallic film is deposited at 300 degrees Celsius and a remainder of the metallic film is deposited at 80 degrees Celsius.