	US 12,305,080 B2
	Slurry composition for polishing silicon oxide film, and polishing method using same
Seung Hun Lee, Daegu (KR); Seung Hyun Lee, Daegu (KR); and Seong Hwan Kim, Daegu (KR)
Assigned to YOUNG CHANG CHEMICAL CO., LTD, Gyeongsangbuk-Do (KR)
Appl. No. 17/430,637
Filed by YOUNG CHANG CHEMICAL CO., LTD, Gyeongsangbuk-do (KR)
PCT Filed Mar. 2, 2020, PCT No. PCT/KR2020/002934 § 371(c)(1), (2) Date Aug. 12, 2021, PCT Pub. No. WO2020/180061, PCT Pub. Date Sep. 10, 2020.
Claims priority of application No. 10-2019-0024836 (KR), filed on Mar. 4, 2019.
Prior Publication US 2022/0145131 A1, May 12, 2022
Int. Cl. C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/304 (2006.01); H01L 21/3105 (2006.01)

CPC C09G 1/02 (2013.01) [C09K 3/1454 (2013.01); H01L 21/304 (2013.01); C09K 3/1409 (2013.01); C09K 3/1445 (2013.01); C09K 3/1463 (2013.01); H01L 21/31051 (2013.01); H01L 21/31053 (2013.01)]

6 Claims

1. A CMP slurry composition configured to adjust a polishing selectivity of a silicon oxide film or a polysilicon film with respect to a silicon nitride film, the CMP slurry composition comprising:

0.2% to 10% by weight of an abrasive composed of colloidal silica;

0.001% to 7% by weight of an additive; and

a solvent,

wherein the colloidal silica has a zeta potential of +15 to +50 mV,

the colloidal silica has a particle size of 30 to 80 nm,

the additive comprises polyethylene glycol and 5-methylbenzotriazole that are present in a content ratio of 0.2 to 1.4:0.025 to 0.05,

a polishing selectivity ratio of the silicon oxide film: the silicon nitride film: the polysilicon film is in a range of 10.2 to 27.5:1:1.3 to 10.7, and

a removal rate of the silicon oxide film is within a range of 200 to 3000 Å/min.