US 12,305,079 B2
CMP slurry composition for polishing polycrystalline silicon and polishing method using same
Jae Woo Lee, Gyeonggi-do (KR); Ji Hye Kim, Gyeonggi-do (KR); and Bo Hyeok Choi, Gyeonggi-do (KR)
Assigned to KCTECH Co., Ltd., (KR)
Appl. No. 17/418,546
Filed by KCTECH CO., LTD., Gyeonggi-do (KR)
PCT Filed Nov. 18, 2019, PCT No. PCT/KR2019/015718
§ 371(c)(1), (2) Date Jun. 25, 2021,
PCT Pub. No. WO2020/138717, PCT Pub. Date Jul. 2, 2020.
Claims priority of application No. 10-2018-0172255 (KR), filed on Dec. 28, 2018.
Prior Publication US 2022/0119679 A1, Apr. 21, 2022
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01); B82Y 40/00 (2011.01)
CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01); B82Y 40/00 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A chemical mechanical polishing (CMP) slurry composition for polishing polycrystalline silicon, the CMP slurry composition comprising:
abrasive particles;
surface roughness modifier;
a polishing regulator including an organic acid; and
a pH regulator,
wherein the abrasive particles comprise a silica in a colloidal phase,
wherein the surface roughness modifier comprises a water-soluble polymer,
wherein the water-soluble polymer comprises at least one selected from a group consisting of hydroxyethyl cellulose (HEC), hydroxymethyl cellulose (HMC), hydroxypropyl cellulose (HPC), methyl hydroxyethyl cellulose (MHEC), chitosan, gelatin, xanthan gum, collagen, carrageenan, flurane, pectin, chondroitin sulfate, alginic acid, dextran, beta-glucan, and hyaluronic acid;
wherein the water-soluble polymer has a weight-average molecular weight of 1,000 or more but less than 100,000; and
wherein the surface roughness modifier is present in an amount of 0.0005 wt % to 0.5 wt % in the CMP slurry composition.