US 12,304,860 B2
Thick film resistor paste, thick film resistor, and electronic component
Masaki Ando, Tokyo (JP); and Takahito Nagano, Tokyo (JP)
Assigned to SUMITOMO METAL MINING CO., LTD., Tokyo (JP)
Appl. No. 17/921,736
Filed by SUMITOMO METAL MINING CO., LTD., Tokyo (JP)
PCT Filed Apr. 30, 2021, PCT No. PCT/JP2021/017300
§ 371(c)(1), (2) Date Oct. 27, 2022,
PCT Pub. No. WO2021/221174, PCT Pub. Date Nov. 4, 2021.
Claims priority of application No. 2020-081115 (JP), filed on May 1, 2020.
Prior Publication US 2023/0167011 A1, Jun. 1, 2023
Int. Cl. C03C 4/14 (2006.01); C03C 8/10 (2006.01); C03C 8/16 (2006.01); H01B 1/22 (2006.01); H01C 7/00 (2006.01)
CPC C03C 4/14 (2013.01) [C03C 8/10 (2013.01); C03C 8/16 (2013.01); H01B 1/22 (2013.01); H01C 7/003 (2013.01)] 6 Claims
 
1. A thick film resistor paste containing a ruthenium-oxide-containing glass powder, characterized by comprising:
a silver powder or a palladium powder, or a mixture of both of the silver powder and the palladium powder;
a ruthenium-oxide-containing glass powder; and
an organic vehicle,
wherein the thick film resistor paste comprises 11.2 mass % or more and 16.8 mass % or less of the ruthenium oxide contained in the ruthenium oxide-containing glass powder relative to 100 mass % of the thick-film resistor paste composition containing the ruthenium oxide-containing glass powder;
wherein the ruthenium-oxide-containing glass comprises 40 mass % or more and 60 mass % or less of the ruthenium oxide;
wherein a glass composition of the ruthenium-oxide-containing glass comprises 33 mass % or more and 60 mass % or less of silicon oxide, 30 mass % or more and 48 mass % or less of lead oxide, and 5 mass % or more and 50 mass % or less of boron oxide relative to 100 mass % of glass components; and
wherein a combined amount of silicon oxide, lead oxide and boron oxide in the ruthenium-oxide-containing glass by mass % is 81.9 mass % or more and 95 mass % or less relative to 100 mass % of the glass components.