US 12,304,830 B2
Porous oxide semiconductor particles
Masanori Inaba, Nagakute (JP); Kazuhisa Yano, Nagakute (JP); Tomohiro Takeshita, Nagakute (JP); Kensaku Kodama, Nagakute (JP); and Toshiyuki Suzuki, Toyota (JP)
Assigned to KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute (JP); and TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP)
Appl. No. 18/036,728
Filed by KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute (JP); and TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP)
PCT Filed Oct. 14, 2021, PCT No. PCT/JP2021/038012
§ 371(c)(1), (2) Date May 12, 2023,
PCT Pub. No. WO2022/102333, PCT Pub. Date May 19, 2022.
Claims priority of application No. 2020-188847 (JP), filed on Nov. 12, 2020.
Prior Publication US 2023/0406720 A1, Dec. 21, 2023
Int. Cl. C01G 19/02 (2006.01); C01G 30/00 (2006.01); H01M 8/10 (2016.01)
CPC C01G 19/02 (2013.01) [C01G 30/00 (2013.01); H01M 8/10 (2013.01); C01P 2002/60 (2013.01); C01P 2006/11 (2013.01); C01P 2006/14 (2013.01); C01P 2006/16 (2013.01); C01P 2006/40 (2013.01)] 9 Claims
OG exemplary drawing
 
1. Porous oxide semiconductor particles comprising a connected structure in which porous primary particles are connected to each other, wherein:
a specific surface area of the porous oxide semiconductor particles is 60 m2/g or more,
an average crystallite diameter of the porous oxide semiconductor particles is 2 nm or more and 8.1 nm or less, and
each of the porous primary particles comprises an aggregate of crystallites composed of an oxide semiconductor.