| CPC B23K 26/364 (2015.10) [B23K 26/0624 (2015.10); B23K 26/083 (2013.01); B23K 26/402 (2013.01); B23K 26/53 (2015.10); H10D 84/08 (2025.01); B23K 2103/56 (2018.08)] | 11 Claims |
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1. A method of singulating or scribing a wafer along a line by irradiating the wafer with laser energy, comprising the steps of:
i) providing a laser source adapted to emit a sequence of successive laser beam pulses,
ii) emitting laser beam pulses from the laser source,
iii) guiding the emitted laser beam pulses along a laser beam pulse direction to irradiate the wafer to be singulated or scribed,
iv) while the emitted laser beam pulses are irradiating the wafer, moving the wafer relative to the irradiating laser beam pulses and orthogonally to the laser beam pulse direction to singulate or scribe the wafer along a line, and
v) cyclically repeating the sequence of laser beam pulses,
wherein the sequence of laser beam pulses comprises:
first and second sets of laser beam pulses,
the first set comprising:
at least one burst of laser beam pulses, each pulse within the burst having a pulse width of 100 picoseconds or less, and
the second set comprising at least one laser beam pulse having a pulse width of 100 picoseconds or less,
wherein the first set of laser beam pulses is used to form at least one singulation or scribe line in the wafer, and the at least one laser beam pulse of the second set is used to perform post-processing subsequent to singulating or scribing of the at least one formed singulation or scribe line, and
wherein each sequence comprises the at least one burst of laser beam pulses of the first set followed by the at least one laser beam pulse of the second set, with the gap between the at least one burst of laser beam pulses of the first set and the at least one laser beam pulse of the second set being at least 100 ps.
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