US 11,985,910 B2
Memristor and neuromorphic device comprising the same
Minhyun Lee, Suwon-si (KR); Dovran Amanov, Cambridge, MA (US); Renjing Xu, Cambridge, MA (US); Houk Jang, Cambridge, MA (US); Haeryong Kim, Seongnam-si (KR); Hyeonjin Shin, Suwon-si (KR); Yeonchoo Cho, Seongnam-si (KR); and Donhee Ham, Cambridge, MA (US)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and President and Fellows Of Harvard College, Cambridge, MA (US)
Filed on Jun. 9, 2022, as Appl. No. 17/836,435.
Application 17/836,435 is a continuation of application No. 16/823,865, filed on Mar. 19, 2020, granted, now 11,374,171.
Claims priority of provisional application 62/862,172, filed on Jun. 17, 2019.
Claims priority of application No. 10-2019-0112371 (KR), filed on Sep. 10, 2019.
Prior Publication US 2022/0320425 A1, Oct. 6, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/826 (2023.02) [H10B 63/80 (2023.02); H10N 70/24 (2023.02); H10N 70/8416 (2023.02)] 21 Claims
OG exemplary drawing
 
1. A memristor comprising:
a lower electrode and an upper electrode that are spaced apart from each other; and
a resistance change layer between the lower electrode and the upper electrode, the resistance change layer comprising a first two-dimensional material layer and a second two-dimensional material layer that are stacked on each other, and
wherein the resistance change layer has resistance characteristics that decrease as a number of sweeps of an applied positive electrical signal increases, and increases as a number of sweeps of an applied negative electrical signal increases.