CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 41/34 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] | 20 Claims |
1. A device comprising:
a stack of magnetic tunneling junction (MTJ) layers, the stack of MTJ layers including a first portion having a first width and a second portion having a second width that is different than the first width, the second portion disposed over the first portion of the stack of MTJ layers;
a first metal re-deposition layer disposed directly on a surface of the first portion of the stack of MTJ layers;
a second metal re-deposition layer disposed directly on a surface of the second portion of the stack of MTJ layers;
a dielectric layer extending from the second metal re-deposition layer to the first metal re-deposition layer; and
a spacer disposed directly on the dielectric layer.
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