a substrate;

a polycrystalline semiconductor that is disposed on the substrate;

a first gate insulation layer that is disposed on the polycrystalline semiconductor;

a driving gate electrode that is disposed on the first gate insulating layer;

a second gate insulating layer that is disposed on the driving gate electrode;

a first interlayer insulation layer that is disposed on the second gate insulating layer;

an oxide semiconductor that is disposed on the first interlayer insulating layer;

a third gate insulating layer that is disposed on the oxide semiconductor;

a switching gate electrode that is disposed on the third gate insulating layer;

a second interlayer insulating layer that is disposed on the switching gate electrode;

a first source electrode and a first drain electrode that are disposed on the second interlayer insulating layer, and connected with the oxide semiconductor;

a second source electrode and a second drain electrode that are disposed on the second interlayer insulating layer, and connected to the polycrystalline semiconductor;

a light emitting diode that is disposed on the substrate, and connected to the second source electrode or the second drain electrode; and

a passivation layer that is disposed between the second interlayer insulating layer and the light emitting diode,

wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm,

wherein the passivation layer comprises a first portion that overlaps the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode, and a second portion that does not overlap the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode, and

wherein a surface height of the first portion is higher than a surface height of the second portion.