	US 11,985,827 B2
	Semiconductor device, driving method of semiconductor device, and electronic device
Hiromichi Godo, Isehara (JP); Hitoshi Kunitake, Isehara (JP); and Kazuki Tsuda, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/790,517
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Jan. 6, 2021, PCT No. PCT/IB2021/050053 § 371(c)(1), (2) Date Jul. 1, 2022, PCT Pub. No. WO2021/144661, PCT Pub. Date Jul. 22, 2021.
Claims priority of application No. 2020-005825 (JP), filed on Jan. 17, 2020; and application No. 2020-017652 (JP), filed on Feb. 5, 2020.
Prior Publication US 2023/0044659 A1, Feb. 9, 2023
Int. Cl. H10B 43/27 (2023.01); G11C 16/00 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H10B 41/27 (2023.01)

CPC H10B 43/27 (2023.02) [G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H10B 41/27 (2023.02)]

22 Claims

1. A semiconductor device comprising:

a first conductor extending in a first direction; and

a structure body extending in a second direction,

wherein the structure body comprises a second conductor, an oxide semiconductor, a functional layer, a first insulator, a second insulator, and a third insulator,

wherein the second conductor is electrically connected to the oxide semiconductor,

wherein in an intersection portion of the first conductor and the structure body, the first insulator, the oxide semiconductor, the second insulator, the functional layer, and the third insulator are concentrically placed outside the second conductor, and

wherein in the intersection portion, the third insulator is thicker than the second insulator.