US 11,985,826 B2
Three-dimensional memory device having adjoined source contact structures and methods for forming the same
Lu Zhang, Wuhan (CN); Zhipeng Wu, Wuhan (CN); Bo Xu, Wuhan (CN); Kai Han, Wuhan (CN); Chuan Yang, Wuhan (CN); Zi Yin, Wuhan (CN); and Liuqun Xie, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jul. 1, 2021, as Appl. No. 17/365,948.
Application 17/365,948 is a division of application No. 16/862,338, filed on Apr. 29, 2020, granted, now 11,665,901.
Application 16/862,338 is a continuation of application No. PCT/CN2020/073415, filed on Jan. 21, 2020.
Prior Publication US 2021/0335814 A1, Oct. 28, 2021
Int. Cl. H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for forming a memory device, comprising:
forming holes extending vertically in a first dielectric deck comprising interleaved first sacrificial layers and first dielectric layers over a substrate;
forming sacrificial source contact structures in the holes;
forming a second dielectric deck comprising interleaved second sacrificial layers and second dielectric layers over the first dielectric deck;
forming a slit opening extending vertically and laterally in the second dielectric deck, the slit opening being aligned with and exposing the sacrificial source contact structures;
removing the sacrificial source contact structures through the slit opening such that the slit opening is interconnected with the holes; and
forming a source contact structure in the slit opening and the holes.