US 11,985,822 B2
Memory device
Teng-Hao Yeh, Zhubei (TW); Chih-Wei Hu, Miaoli County (TW); Hang-Ting Lue, Hsinchu (TW); and Guan-Ru Lee, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Sep. 2, 2020, as Appl. No. 17/009,968.
Prior Publication US 2022/0068957 A1, Mar. 3, 2022
Int. Cl. H01L 27/115 (2017.01); H01L 23/522 (2006.01); H01L 23/535 (2006.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 23/5226 (2013.01); H10B 43/10 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a stacked structure;
a tubular element penetrating the stacked structure, wherein the tubular element comprises a dummy channel layer and a memory film, and the dummy channel layer is between the memory film and the conductive pillar;
a conductive pillar enclosed by the tubular element and extending beyond a bottom surface of the dummy channel layer;
memory cells in the stacked structure and electrically connected to the conductive pillar; and
a polycrystalline semiconductor layer below the memory cells, wherein the tubular element and the conductive pillar pass through the polycrystalline semiconductor layer, and a portion of an outer surface of the conductive pillar is covered by the tubular element.