US 11,984,857 B2
Impedance transformation circuit for amplifier
Leslie Paul Wallis, Ottawa (CA)
Assigned to Skyworks Solutions, Inc., Irvine, CA (US)
Filed by Skyworks Solutions, Inc., Irvine, CA (US)
Filed on Jan. 8, 2021, as Appl. No. 17/144,952.
Application 17/144,952 is a continuation of application No. 16/263,884, filed on Jan. 31, 2019, granted, now 10,892,718.
Application 16/263,884 is a continuation of application No. 15/788,454, filed on Oct. 19, 2017, granted, now 10,230,337, issued on Mar. 12, 2019.
Application 15/788,454 is a continuation of application No. 15/389,097, filed on Dec. 22, 2016, granted, now 9,825,597, issued on Nov. 21, 2017.
Claims priority of provisional application 62/273,225, filed on Dec. 30, 2015.
Prior Publication US 2021/0211103 A1, Jul. 8, 2021
Int. Cl. H03F 1/22 (2006.01); H03F 1/34 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01); H03F 3/24 (2006.01); H03F 3/72 (2006.01); H04B 1/04 (2006.01); H04B 1/16 (2006.01)
CPC H03F 1/565 (2013.01) [H03F 1/22 (2013.01); H03F 1/223 (2013.01); H03F 1/34 (2013.01); H03F 1/342 (2013.01); H03F 1/347 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 3/245 (2013.01); H03F 3/72 (2013.01); H04B 1/0475 (2013.01); H04B 1/1607 (2013.01); H03F 2200/18 (2013.01); H03F 2200/294 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01); H03F 2200/75 (2013.01); H04B 2001/0433 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A radio frequency device comprising:
a first inductor that receives a radio frequency signal and a second inductor in series with the first inductor, the second inductor implemented in a first metal layer of a semiconductor die;
an amplification circuit in communication with the second inductor, the amplification circuit amplifies the radio frequency signal; and
a third inductor magnetically coupled to at least the second inductor to provide negative feedback to linearize the amplification circuit, the third inductor implemented in a second metal layer of the semiconductor die, and the second metal layer is conductively connected to the first metal layer.