US 11,984,533 B2
Light emitting device using a gallium nitride (GaN) based material
Kunihiko Tasai, Tokyo (JP); Hiroshi Nakajima, Tokyo (JP); Hidekazu Kawanishi, Tokyo (JP); and Katsunori Yanashima, Tokyo (JP)
Assigned to Sony Corporation, Tokyo (JP)
Appl. No. 17/263,399
Filed by SONY CORPORATION, Tokyo (JP)
PCT Filed Jul. 1, 2019, PCT No. PCT/JP2019/026113
§ 371(c)(1), (2) Date Jan. 26, 2021,
PCT Pub. No. WO2020/021979, PCT Pub. Date Jan. 30, 2020.
Claims priority of application No. 2018-140843 (JP), filed on Jul. 27, 2018.
Prior Publication US 2021/0159362 A1, May 27, 2021
Int. Cl. H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/58 (2010.01); H01S 5/026 (2006.01); H01S 5/343 (2006.01)
CPC H01L 33/32 (2013.01) [H01L 33/0075 (2013.01); H01L 33/12 (2013.01); H01L 33/58 (2013.01); H01S 5/026 (2013.01); H01S 5/34333 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A light emitting device comprising:
a first layer including Alx2Inx1Ga(1-x1-x2) N (0<x1<1, 0≤x2<1);
a second layer that is provided on the first layer and includes Aly2Iny1Ga(1-y1-y2) N (0<y1<1, 0≤y2<1); that is lattice relaxed with respect to the first layer; and
a third layer that is provided on the second layer, includes Alz2Inz1Ga(1-z1-z2) N (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer, wherein
a lattice constant aGAN of GaN in an in-plane direction, a lattice constant a1 of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN <a2<a1, a3.