| CPC H01L 33/08 (2013.01) [H01L 27/156 (2013.01); H01L 33/42 (2013.01)] | 20 Claims |
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1. A light emitting device, comprising:
a first n-type semiconductor layer;
a first light emitting layer disposed on the first n-type semiconductor layer;
a first p-type semiconductor layer disposed on the first light emitting layer;
a second p-type semiconductor layer disposed on the first p-type semiconductor layer;
a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer;
a second light emitting layer disposed on the second p-type semiconductor layer;
a second n-type semiconductor layer disposed on the second light emitting layer;
a p-type electrode disposed on the second p-type semiconductor layer;
a first n-type electrode disposed on the first n-type semiconductor layer; and
a second n-type electrode disposed on the second n-type semiconductor layer,
wherein the second n-type electrode is disposed in a gap between the p-type electrode and the first n-type electrode in a plan view.
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