US 11,984,529 B2
Semiconductor heterostructure with p-type superlattice
Mohamed Lachab, West Columbia, SC (US)
Assigned to Sensor Electronic Technology, Inc., Columbia, SC (US)
Filed by Sensor Electronic Technology, Inc., Columbia, SC (US)
Filed on Jul. 16, 2020, as Appl. No. 16/930,819.
Application 16/930,819 is a continuation of application No. 16/148,360, filed on Oct. 1, 2018, abandoned.
Claims priority of provisional application 62/566,420, filed on Sep. 30, 2017.
Prior Publication US 2020/0350465 A1, Nov. 5, 2020
Int. Cl. H01L 33/06 (2010.01); H01L 29/00 (2006.01); H01L 33/10 (2010.01); H01L 33/02 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 29/00 (2013.01); H01L 33/10 (2013.01); H01L 33/025 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A heterostructure comprising:
an active region including at least one quantum well and at least one barrier;
an electron blocking layer located adjacent to the active region, wherein the electron blocking layer includes a region of graded composition formed by a composition having an aluminum nitride molar fraction that continuously increases or continuously decreases with distance from the active region; and
a p-type superlattice layer located adjacent to the electron blocking layer, wherein the p-type superlattice layer includes at least one well and at least one barrier, wherein an aluminum nitride molar fraction of each of the at least one well and each of the at least one barrier in the p-type superlattice layer is lower than an average aluminum nitride molar fraction of the region of graded composition in the electron blocking layer;
a p-type contact layer located adjacent to the p-type superlattice layer.