CPC H01L 31/085 (2013.01) [H01L 31/118 (2013.01)] | 17 Claims |
1. A diamond gammavoltaic device comprising:
a diamond body having a diamond body surface including first and second opposing surfaces;
a low-barrier electrical contact formed on the first surface; and
a high-barrier electrical contact formed on the second surface, wherein the high-barrier electrical contact has a higher electrostatic potential barrier than the low-barrier electrical contact,
wherein the diamond body surface that is not in contact with either the low-barrier electrical contact or the high-barrier electrical contact is at least partially surface transfer doped to provide a p-type surface.
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