US 11,984,520 B2
Light absorption structure and light sensing device having the same
Insung Joe, Seoul (KR); Jonghwa Shin, Daejeon (KR); Joonkyo Jung, Daejeon (KR); and Jong Uk Kim, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR); and Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 15, 2022, as Appl. No. 17/671,697.
Claims priority of application No. 10-2021-0068627 (KR), filed on May 27, 2021; and application No. 10-2021-0105860 (KR), filed on Aug. 11, 2021.
Prior Publication US 2022/0384666 A1, Dec. 1, 2022
Int. Cl. H01L 31/0232 (2014.01); H01L 31/102 (2006.01)
CPC H01L 31/02327 (2013.01) [H01L 31/102 (2013.01)] 20 Claims
OG exemplary drawing
 
11. A light sensing device, comprising:
a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period;
a first electrode in one region of the semiconductor layer; and
a second electrode on the second surface of the semiconductor layer and having a reflective metal,
wherein the width change period extends parallel to a direction extending from the first surface of the semiconductor layer to the second surface of the semiconductor layer.