US 11,984,519 B2
Semiconductor devices with single-photon avalanche diodes and hybrid isolation structures
Swarnal Borthakur, Boise, ID (US); and Marc Allen Sulfridge, Boise, ID (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Feb. 24, 2023, as Appl. No. 18/174,017.
Application 18/174,017 is a continuation of application No. 16/948,325, filed on Sep. 14, 2020, granted, now 11,616,152.
Claims priority of provisional application 62/981,902, filed on Feb. 26, 2020.
Claims priority of provisional application 62/943,475, filed on Dec. 4, 2019.
Prior Publication US 2023/0215960 A1, Jul. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/02 (2006.01); G02B 3/06 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/055 (2014.01); H01L 31/107 (2006.01); H04N 25/63 (2023.01)
CPC H01L 31/02027 (2013.01) [G02B 3/06 (2013.01); H01L 27/14605 (2013.01); H01L 27/1461 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01); H01L 31/02327 (2013.01); H01L 31/055 (2013.01); H01L 31/107 (2013.01); H01L 27/1464 (2013.01); H04N 25/63 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having first and second opposing surfaces;
a photosensitive element formed in the substrate;
a trench in the substrate that extends around the photosensitive element;
a metal filler in a first subset of the trench; and
a dielectric filler in a second, different subset of the trench, wherein the dielectric filler is interposed between the metal filler and the first surface and wherein the dielectric filler has a greater depth thickness between the metal filler and the first surface than a distance between the metal filler and the second surface.